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| 30 10V 4V 4.5V 6V 20 30 25 20 Vds=5V 125C Id (A) Id(A) 10 Vgs=3.5V 15 10 25C 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 Vgs(Volts) Figure 2: Transfer Characteristics 2.2 Vgs=4.5V 22 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 20 Vgs=10V Id=8.2A Rds(on) (m:) 18 Vgs=10V 16 Vgs=4.5V Id=7.6A 14 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 Id=8.2A 40 125C 1.0E+01 1.0E+00 125C 1.0E-01 Rds(on) (m:) Is (A) 30 25C 20 1.0E-02 25C 1.0E-03 1.0E-04 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=30V Id=8.2A 3500 3000 Capacitance (pF) 2500 2000 1500 Coss 1000 Crss 500 Ciss Vgs (Volts) 6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 100Ps 10Ps 10.0 1s 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 1ms 10ms 40 Tj(max)=150C Ta=25C 30 Power (W) Id (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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